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| 1.9 0.95 0.95 2.9 0.4 1.3 2.4 1.0 jiang su changjiang electronics technology co. , ltd sot - 23 plastic - encapsulate transistors fmmt4124 transistor ? n p n ? features power dissipation p cm o 0.33 w ? t amb=25 ??? collector current i cm o 0.2 a c ollector - base voltage v (br) cbo o 30 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? t o +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min typ max unit collector - base breakdown voltage v (br) cbo i c = 10 | a ? i e =0 30 v collector - emitter breakdown voltage v (br) c e o i c = 1m a ? i b =0 25 v emitter - base breakdown voltage v (br)eb o i e = 10 | a ? i c =0 5 v collector cut - off current i cbo v cb = 20 v , i e =0 0.05 | a emitter cut - off current i ebo v eb = 3 v , i c =0 0.05 | a dc current gain h fe v ce = 1 v, i c = 2 m a 120 360 collector - emitter saturation voltage v ce (sat) i c = 50 ma , i b = 5m a 0.3 v base - emitter saturation voltage v be (sat) i c = 50 ma , i b = 5m a 0.95 v transition frequency f t v ce =20v, i c = 10ma f =100mhz 300 mhz marking fmmt4124 o 2c un it : mm sot ?a 23 1. base 2. emitter 3 . collector
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